#Fuji, #1DI50F_120, #IGBT_Module, #IGBT, 1DI50F-120 Power Bipolar Transistor, 50A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin; 1DI50F-120
Manufacturer Part Number: 1DI50F-120Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-PUFM-X7Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Collector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 1200 VConfiguration: DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 70JESD-30 Code: R-PUFM-X7Number of Elements: 1Number of Terminals: 7Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation Ambient-Max: 400 WPower Dissipation-Max (Abs): 400 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: CHOPPERTransistor Element Material: SILICONTurn-off Time-Max (toff): 18000 nsTurn-on Time-Max (ton): 3000 ns Power Bipolar Transistor, 50A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin