#Fuji, #1MBI800PN_180, #IGBT_Module, #IGBT, 1MBI800PN-180 Insulated Gate Bipolar Transistor, 800A I(C), 1800V V(BR)CES, N-Channel, MODULE-7; 1MBI800PN-180
Manufacturer Part Number: 1MBI800PN-180Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Additional Feature: HIGH SWITCHING SPEEDCollector Current-Max (IC): 800 ACollector-Emitter Voltage-Max: 1800 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 1Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 4200 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 1800 nsTurn-on Time-Nom (ton): 2000 nsVCEsat-Max: 4.5 V Insulated Gate Bipolar Transistor, 800A I(C), 1800V V(BR)CES, N-Channel, MODULE-7