#Vishay, #25TTS08, #IGBT_Module, #IGBT, 25TTS08 Silicon Controlled Rectifier, SCR; 25TTS08
Manufacturer Part Number: VS-25TTS08-M3Part Life Cycle Code: ActiveIhs Manufacturer: VISHAY SEMICONDUCTORSPackage Description: FLANGE MOUNT, R-PSFM-T3ECCN Code: EAR99Manufacturer: Vishay SemiconductorsRisk Rank: 5.12Circuit Commutated Turn-off Time-Nom: 110 µsConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 500 V/usDC Gate Trigger Current-Max: 45 mADC Gate Trigger Voltage-Max: 2.5 VHolding Current-Max: 100 mAJEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3JESD-609 Code: e3Leakage Current-Max: 10 mANon-Repetitive Pk On-state Cur: 350 ANumber of Elements: 1Number of Terminals: 3On-state Current-Max: 16000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT APPLICABLERMS On-state Current-Max: 25 ARepetitive Peak Off-state Voltage: 800 VRepetitive Peak Reverse Voltage: 800 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Finish: MATTE TIN OVER NICKELTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Silicon Controlled Rectifier, SCR