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Vishay 25TTS12S New IGBT Module

#Vishay, #25TTS12S, #IGBT_Module, #IGBT, 25TTS12S Silicon Controlled Rectifier, 25A I(T)RMS, 16000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-220AC, SMD-2

· Categories: IGBT Module
· Manufacturer: Vishay
· Price: US$
· Date Code: 2015+
. Available Qty: 3404
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25TTS12S Specification

Sell 25TTS12S, #Vishay #25TTS12S New Stock, 25TTS12S Silicon Controlled Rectifier, 25A I(T)RMS, 16000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-220AC, SMD-220, D2PAK-3; 25TTS12S, #IGBT_Module, #IGBT, #25TTS12S
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/25tts12s.html

Manufacturer Part Number: 25TTS12SRohs Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPart Package Code: TO-220ACPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 3HTS Code: 8541.30.00.80Manufacturer: Vishay IntertechnologiesRisk Rank: 7.77Circuit Commutated Turn-off Time-Nom: 110 µsConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 500 V/usDC Gate Trigger Current-Max: 45 mADC Gate Trigger Voltage-Max: 2.5 VHolding Current-Max: 100 mAJEDEC-95 Code: TO-220ACJESD-30 Code: R-PSSO-G2Moisture Sensitivity Level: 1Non-Repetitive Pk On-state Cur: 300 ANumber of Elements: 1Number of Terminals: 2On-state Current-Max: 16000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 225Qualification Status: Not QualifiedRMS On-state Current-Max: 25 ARepetitive Peak Off-state Voltage: 1200 VRepetitive Peak Reverse Voltage: 1200 VSubcategory: Silicon Controlled RectifiersSurface Mount: YESTerminal Form: GULL WINGTerminal Position: SINGLETime Silicon Controlled Rectifier, 25A I(T)RMS, 16000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-220AC, SMD-220, D2PAK-3

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