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Fuji 2DI50M-120 New IGBT Module

#Fuji, #2DI50M_120, #IGBT_Module, #IGBT, 2DI50M-120 Power Bipolar Transistor, 50A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin, M204, 7 PI

· Categories: IGBT Module
· Manufacturer: Fuji
· Price: US$
· Date Code: 2015+
. Available Qty: 2755
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2DI50M-120 Specification

Sell 2DI50M-120, #Fuji #2DI50M-120 New Stock, 2DI50M-120 Power Bipolar Transistor, 50A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin, M204, 7 PIN; 2DI50M-120, #IGBT_Module, #IGBT, #2DI50M_120
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/2di50m-120.html

Manufacturer Part Number: 2DI50M-120Part Life Cycle Code: ObsoleteIhs Manufacturer: COLLMER SEMICONDUCTOR INCPackage Description: FLANGE MOUNT, R-PUFM-X7Pin Count: 7Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Collector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 1200 VConfiguration: 2 BANKS, DARLINGTON, 4 TRANSISTORS WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 500JESD-30 Code: R-PUFM-X7Number of Elements: 2Number of Terminals: 7Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Bipolar Transistor, 50A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin, M204, 7 PIN

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