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ON  2N7002LT1G New IGBT Module

#ON , #2N7002LT1G, #IGBT_Module, #IGBT, 2N7002LT1G N-Channel Small Signal MOSFET 60V 115mA 7.5 Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL; 2N7002LT1G

· Categories: IGBT Module
· Manufacturer: ON 
· Price: US$
· Date Code: 2015+
. Available Qty: 1512
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2N7002LT1G Specification

Sell 2N7002LT1G, #ON  #2N7002LT1G New Stock, 2N7002LT1G N-Channel Small Signal MOSFET 60V 115mA 7.5 Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL; 2N7002LT1G, #IGBT_Module, #IGBT, #2N7002LT1G
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URL: https://www.slw-ele.com/2n7002lt1g.html

Manufacturer Part Number: 2N7002LT1GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPart Package Code: SOT-23Package Description: SMALL OUTLINE, R-PDSO-G3Pin Count: 3Manufacturer Package Code: 318-08ECCN Code: EAR99HTS Code: 8541.21.00.95Manufacturer: ON SemiconductorRisk Rank: 0.36Configuration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 60 VDrain Current-Max (Abs) (ID): 0.115 ADrain Current-Max (ID): 0.115 ADrain-source On Resistance-Max: 7.5 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 5 pFJEDEC-95 Code: TO-236JESD-30 Code: R-PDSO-G3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °COperating Temperature-Min: -55 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.3 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime N-Channel Small Signal MOSFET 60V 115mA 7.5 Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL

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