ON　 2N7002V IGBT Module

Manufacturer Part Number: 2N7002VBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-F6Manufacturer Package Code: 419BHECCN Code: EAR99HTS Code: 8541.21.00.95Manufacturer: ON SemiconductorRisk Rank: 0.9Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 60 VDrain Current-Max (Abs) (ID): 0.28 ADrain Current-Max (ID): 0.28 ADrain-source On Resistance-Max: 7.5 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 7 pFJESD-30 Code: R-PDSO-F6Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.25 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime N-Channel Enhancement Mode Field Effect Transistor 60V, 0.28A, 2Ω, 3000-REEL