#Panasonic, #2SB1011, #IGBT_Module, #IGBT, 2SB1011 Power Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-12
Manufacturer Part Number: 2SB1011Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: PANASONIC CORPPackage Description: FLANGE MOUNT, R-PSFM-T3ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: Panasonic Electronic ComponentsRisk Rank: 5.81Case Connection: ISOLATEDCollector Current-Max (IC): 0.1 ACollector-Emitter Voltage-Max: 400 VConfiguration: SINGLEDC Current Gain-Min (hFE): 30JEDEC-95 Code: TO-126JESD-30 Code: R-PSFM-T3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: PNPPower Dissipation-Max (Abs): 1.2 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: TIN SILVER BISMUTH COPPERTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126B-A1, 3 PIN