ON　 2SB1123S-TD-E IGBT Module

Manufacturer Part Number: 2SB1123S-TD-EBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PSSO-F3Pin Count: 3Manufacturer Package Code: 419AUECCN Code: EAR99HTS Code: 8541.21.00.75Manufacturer: ON SemiconductorRisk Rank: 1.08Case Connection: COLLECTORCollector Current-Max (IC): 2 ACollector-Emitter Voltage-Max: 50 VConfiguration: SINGLEDC Current Gain-Min (hFE): 140JEDEC-95 Code: TO-243AAJESD-30 Code: R-PSSO-F3JESD-609 Code: e6Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: PNPSurface Mount: YESTerminal Finish: Tin/Bismuth (Sn/Bi)Terminal Form: FLATTerminal Position: SINGLETransistor Application: SWITCHINGTransistor Element Material: SILICONTransition Frequency-Nom (fT): 150 MHzTurn-off Time-Max (toff): 480 nsTurn-on Time-Max (ton): 60 ns Bipolar Transistor, -50V, -2A, Low VCE(sat), (PNP)NPN Single PCP hFE = 140-280, SOT-89 / PCP-1, 1000-REEL