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ON  2SB1216S-TL-H IGBT Module

#ON , #2SB1216S_TL_H, #IGBT_Module, #IGBT, 2SB1216S-TL-H Bipolar Transistor, -100V, -4A, Low VCE(sat), PNP Single, DPAK / TP-FA, 700-REEL; 2SB1216S-TL-H

· Categories: IGBT Module
· Manufacturer: ON 
· Price: US$
· Date Code: 2015+
. Available Qty: 1017
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2SB1216S-TL-H Specification

Sell 2SB1216S-TL-H, #ON  #2SB1216S-TL-H Stock, 2SB1216S-TL-H Bipolar Transistor, -100V, -4A, Low VCE(sat), PNP Single, DPAK / TP-FA, 700-REEL; 2SB1216S-TL-H, #IGBT_Module, #IGBT, #2SB1216S_TL_H
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/2sb1216s-tl-h.html

Manufacturer Part Number: 2SB1216S-TL-HBrand Name: ON SemiconductorPbfree Code: End Of LifeIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 3Manufacturer Package Code: 369AHECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: ON SemiconductorRisk Rank: 5.13Case Connection: COLLECTORCollector Current-Max (IC): 4 ACollector-Emitter Voltage-Max: 100 VConfiguration: SINGLEDC Current Gain-Min (hFE): 140JEDEC-95 Code: TO-252JESD-30 Code: R-PSSO-G2JESD-609 Code: e6Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: PNPPower Dissipation-Max (Abs): 20 WSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin/Bismuth (Sn/Bi)Terminal Form: GULL WINGTerminal Position: SINGLETransistor Application: SWITCHINGTransistor Element Material: SILICONTransition Frequency-Nom (fT): 130 MHz Bipolar Transistor, -100V, -4A, Low VCE(sat), PNP Single, DPAK / TP-FA, 700-REEL

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