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ON Semiconductor 2SD1816S-E IGBT Module

#ON Semiconductor, #2SD1816S_E, #IGBT_Module, #IGBT, 2SD1816S-E Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single, IPAK / TP, 500-BLKBG; 2SD1816S-E

· Categories: IGBT Module
· Manufacturer: ON Semiconductor
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 20456
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2SD1816S-E Specification

Sell 2SD1816S-E, #ON Semiconductor #2SD1816S-E Stock, 2SD1816S-E Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single, IPAK / TP, 500-BLKBG; 2SD1816S-E, #IGBT_Module, #IGBT, #2SD1816S_E
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/2sd1816s-e.html

Manufacturer Part Number: 2SD1816S-EBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: IN-LINE, R-PSIP-T3Pin Count: 3Manufacturer Package Code: 369AJECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: ON SemiconductorRisk Rank: 1.35Case Connection: COLLECTORCollector Current-Max (IC): 4 ACollector-Emitter Voltage-Max: 100 VConfiguration: SINGLEDC Current Gain-Min (hFE): 140JEDEC-95 Code: TO-251JESD-30 Code: R-PSIP-T3JESD-609 Code: e6Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 20 WSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: Tin/Bismuth (Sn/Bi)Terminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: SWITCHINGTransistor Element Material: SILICONTransition Frequency-Nom (fT): 180 MHz Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single, IPAK / TP, 500-BLKBG

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