#Sanken, #2SD2015, #IGBT_Module, #IGBT, 2SD2015 Power Bipolar Transistor, 4A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, FM20, TO-220F,
Manufacturer Part Number: 2SD2015Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: SANKEN ELECTRIC CO LTDPart Package Code: TO-220FPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3ECCN Code: EAR99Manufacturer: Sanken Electric Co LtdRisk Rank: 5.39Additional Feature: BUILT IN BIAS RESISTOR RATIO IS 0.167Case Connection: ISOLATEDCollector Current-Max (IC): 4 ACollector-Emitter Voltage-Max: 120 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 2000JESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 25 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Bipolar Transistor, 4A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, FM20, TO-220F, 3 PIN