#Avago Technologies US Inc., #5082_3081, #IGBT_Module, #IGBT, 5082-3081 Pin Diode, 100V V(BR), Silicon, HERMETIC SEALED, GLASS PACKAGE-2; 5082-3081
Manufacturer Part Number: 5082-3081Rohs Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: Broadcom LTDPackage Description: O-LALF-W2ECCN Code: EAR99HTS Code: 8541.10.00.70Manufacturer: Broadcom LimitedRisk Rank: 5.26Additional Feature: LOW HARMONIC DISTORTIONApplication: ATTENUATOR; SWITCHINGBreakdown Voltage-Min: 100 VCase Connection: ISOLATEDConfiguration: SINGLEDiode Capacitance-Max: 0.4 pFDiode Capacitance-Nom: 0.4 pFDiode Element Material: SILICONDiode Forward Resistance-Max: 3.5 ΩDiode Res Test Current: 100 mADiode Res Test Frequency: 100 MHzDiode Type: PIN DIODEJESD-30 Code: O-LALF-W2JESD-609 Code: e0Minority Carrier Lifetime-Nom: 2.5 µsMoisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °COperating Temperature-Min: -65 °CPackage Body Material: GLASSPackage Shape: ROUNDPackage Style: LONG FORMPeak Reflow Temperature (Cel): NOT SPECIFIEDPower Dissipation-Max: 0.25 WQualification Status: Not QualifiedReverse Test Voltage: 50 VSubcategory: PIN DiodesSurface Mount: NOTechnology: POSITIVE-INTRINSIC-NEGATIVETerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: WIRETerminal Position: AXIALTime Pin Diode, 100V V(BR), Silicon, HERMETIC SEALED, GLASS PACKAGE-2