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ABB 5SNE0800M170100 IGBT Module

#ABB, #5SNE0800M170100, #IGBT_Module, #IGBT, 5SNE0800M170100 Insulated Gate Bipolar Transistor, 800A I(C), 1700V V(BR)CES, N-Channel, HIPAK-7; 5SNE0800M170100

· Categories: IGBT Module
· Manufacturer: ABB
· Price: US$
· Date Code: 11+
. Available Qty: 188
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5SNE0800M170100 Specification

Sell 5SNE0800M170100, #ABB #5SNE0800M170100 Stock, 5SNE0800M170100 Insulated Gate Bipolar Transistor, 800A I(C), 1700V V(BR)CES, N-Channel, HIPAK-7; 5SNE0800M170100, #IGBT_Module, #IGBT, #5SNE0800M170100
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/5sne0800m170100.html

Manufacturer Part Number: 5SNE0800M170100Part Life Cycle Code: ActiveIhs Manufacturer: ABB LTDPackage Description: FLANGE MOUNT, R-PUFM-X7Pin Count: 7Manufacturer: ABB SemiconductorsRisk Rank: 5.73Case Connection: ISOLATEDCollector Current-Max (IC): 800 ACollector-Emitter Voltage-Max: 1700 VConfiguration: SINGLE WITH BUILT-IN DIODEJESD-30 Code: R-PUFM-X7Number of Elements: 1Number of Terminals: 7Operating Temperature-Max: 125 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: GENERAL PURPOSE SWITCHINGTransistor Element Material: SILICONTurn-off Time-Nom (toff): 1060 nsTurn-on Time-Nom (ton): 655 ns Insulated Gate Bipolar Transistor, 800A I(C), 1700V V(BR)CES, N-Channel, HIPAK-7

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