#ABB, #5SNE0800M170100, #IGBT_Module, #IGBT, 5SNE0800M170100 Insulated Gate Bipolar Transistor, 800A I(C), 1700V V(BR)CES, N-Channel, HIPAK-7; 5SNE0800M170100
Manufacturer Part Number: 5SNE0800M170100Part Life Cycle Code: ActiveIhs Manufacturer: ABB LTDPackage Description: FLANGE MOUNT, R-PUFM-X7Pin Count: 7Manufacturer: ABB SemiconductorsRisk Rank: 5.73Case Connection: ISOLATEDCollector Current-Max (IC): 800 ACollector-Emitter Voltage-Max: 1700 VConfiguration: SINGLE WITH BUILT-IN DIODEJESD-30 Code: R-PUFM-X7Number of Elements: 1Number of Terminals: 7Operating Temperature-Max: 125 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: GENERAL PURPOSE SWITCHINGTransistor Element Material: SILICONTurn-off Time-Nom (toff): 1060 nsTurn-on Time-Nom (ton): 655 ns Insulated Gate Bipolar Transistor, 800A I(C), 1700V V(BR)CES, N-Channel, HIPAK-7