#FUJI, #6MBI75UA_120, #IGBT_Module, #IGBT, 6MBI75UA-120 Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, M636, 28 PIN; 6MBI75UA-120
Manufacturer Part Number: 6MBI75UA-120Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-XUFM-X28Pin Count: 28Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORJESD-30 Code: R-XUFM-X28Number of Elements: 6Number of Terminals: 28Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 360 nsTurn-on Time-Nom (ton): 250 ns Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, M636, 28 PIN