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FUJI 6MBI8F-120 New IGBT Module

#FUJI, #6MBI8F_120, #IGBT_Module, #IGBT, 6MBI8F-120 Insulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel, M604, 15 PIN; 6MBI8F-120

· Categories: IGBT Module
· Manufacturer: FUJI
· Price: US$
· Date Code: 11+
. Available Qty: 180
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6MBI8F-120 Specification

Sell 6MBI8F-120, #FUJI #6MBI8F-120 New Stock, 6MBI8F-120 Insulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel, M604, 15 PIN; 6MBI8F-120, #IGBT_Module, #IGBT, #6MBI8F_120
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/6mbi8f-120.html

Manufacturer Part Number: 6MBI8F-120Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-XUFM-X15Pin Count: 15Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Collector Current-Max (IC): 8 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEFall Time-Max (tf): 1000 nsJESD-30 Code: R-XUFM-X15Number of Elements: 6Number of Terminals: 15Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 360 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONVCEsat-Max: 2.5 V Insulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel, M604, 15 PIN

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