#FUJI, #7MBR15NF120, #IGBT_Module, #IGBT, 7MBR15NF120 Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel; 7MBR15NF120
Manufacturer Part Number: 7MBR15NF120Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-XUFM-X21Manufacturer: Fuji Electric Co LtdRisk Rank: 5.66Additional Feature: 3 PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULECollector Current-Max (IC): 15 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X21Number of Elements: 7Number of Terminals: 21Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 1500 nsTurn-on Time-Nom (ton): 1200 nsVCEsat-Max: 3.3 V Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel