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Advanced Linear Devices Inc ALD1107PBL IGBT Module

#Advanced Linear Devices Inc, #ALD1107PBL, #IGBT_Module, #IGBT, ALD1107PBL Small Signal Field-Effect Transistor, 10.6V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, RO

· Categories: IGBT Module
· Manufacturer: Advanced Linear Devices Inc
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 250
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ALD1107PBL Specification

Sell ALD1107PBL, #Advanced Linear Devices Inc #ALD1107PBL Stock, ALD1107PBL Small Signal Field-Effect Transistor, 10.6V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, PBL, DIP-14; ALD1107PBL, #IGBT_Module, #IGBT, #ALD1107PBL
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Manufacturer Part Number: ALD1107PBLPbfree Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: ADVANCED LINEAR DEVICES INCPackage Description: IN-LINE, R-PDIP-T14ECCN Code: EAR99Manufacturer: Advanced Linear Devices IncRisk Rank: 5.31Configuration: COMMON SUBSTRATE, 4 ELEMENTSDS Breakdown Voltage-Min: 10.6 VDrain-source On Resistance-Max: 1800 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDIP-T14Moisture Sensitivity Level: 1Number of Elements: 4Number of Terminals: 14Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPolarity/Channel Type: P-CHANNELSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICON Small Signal Field-Effect Transistor, 10.6V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, PBL, DIP-14

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