#Microsemi Power Products Group, #APT40GP90B2DQ2G, #IGBT_Module, #IGBT, APT40GP90B2DQ2G Insulated Gate Bipolar Transistor, 101A I(C), 900V V(BR)CES, N-Channel, ROHS COMPLIANT, T-MAX, 3 PIN; AP
Manufacturer Part Number: APT40GP90B2DQ2GPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: MICROSEMI CORPPackage Description: IN-LINE, R-PSIP-T3Pin Count: 3Manufacturer: Microsemi CorporationRisk Rank: 7.64Additional Feature: LOW CONDUCTION LOSSCase Connection: COLLECTORCollector Current-Max (IC): 101 ACollector-Emitter Voltage-Max: 900 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 6 VGate-Emitter Voltage-Max: 30 VJESD-30 Code: R-PSIP-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 543 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 101A I(C), 900V V(BR)CES, N-Channel, ROHS COMPLIANT, T-MAX, 3 PIN