#Microsemi Power Products Group, #APTDF100H60G, #IGBT_Module, #IGBT, APTDF100H60G Bridge Rectifier Diode, 1 Phase, 135A, 600V V(RRM), Silicon, ROHS COMPLIANT, SP4, MODULE-4; APTDF100H60G
Manufacturer Part Number: APTDF100H60GPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: R-XUFM-X4Pin Count: 4HTS Code: 8541.10.00.80Manufacturer: Microsemi CorporationRisk Rank: 5.45Additional Feature: LOW NOISEBreakdown Voltage-Min: 600 VCase Connection: ISOLATEDConfiguration: BRIDGE, 4 ELEMENTSDiode Element Material: SILICONDiode Type: BRIDGE RECTIFIER DIODEForward Voltage-Max (VF): 2 VJESD-30 Code: R-XUFM-X4JESD-609 Code: e3Non-rep Pk Forward Current-Max: 500 ANumber of Elements: 4Number of Phases: 1Number of Terminals: 4Operating Temperature-Max: 175 °COperating Temperature-Min: -40 °COutput Current-Max: 135 APackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 260Qualification Status: Not QualifiedRep Pk Reverse Voltage-Max: 600 VSubcategory: Bridge Rectifier DiodesSurface Mount: NOTerminal Finish: MATTE TINTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Bridge Rectifier Diode, 1 Phase, 135A, 600V V(RRM), Silicon, ROHS COMPLIANT, SP4, MODULE-4