#Microsemi Power Products Group, #APTGF75DA120T1G, #IGBT_Module, #IGBT, APTGF75DA120T1G Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN; AP
Manufacturer Part Number: APTGF75DA120T1GPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPackage Description: FLANGE MOUNT, R-XUFM-T12Pin Count: 12ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.83Case Connection: ISOLATEDCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-T12JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 12Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 500 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: THROUGH-HOLETerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP1, 12 PIN