#APT, #APTGF90SK60D1G, #IGBT_Module, #IGBT, APTGF90SK60D1G Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, MODULE-7; APTGF90SK60D1G
Manufacturer Part Number: APTGF90SK60D1GPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7Manufacturer: Microsemi CorporationRisk Rank: 5.65Case Connection: ISOLATEDCollector Current-Max (IC): 130 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X7JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, MODULE-7