#APT, #APTGT200U120D4G, #IGBT_Module, #IGBT, APTGT200U120D4G Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-4; APTGT200U120D4G
Manufacturer Part Number: APTGT200U120D4GPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X4Pin Count: 4Manufacturer: Microsemi CorporationRisk Rank: 5.73Case Connection: ISOLATEDCollector Current-Max (IC): 300 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X4JESD-609 Code: e1Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-4