#Microsemi Power Products Group, #ARF476FL, #IGBT_Module, #IGBT, ARF476FL RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semicond
Manufacturer Part Number: ARF476FLPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPackage Description: FLANGE MOUNT, R-XDFM-F8ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 2.27Additional Feature: HIGH VOLTAGEConfiguration: COMMON SOURCE, 2 ELEMENTSDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 10 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: VERY HIGH FREQUENCY BANDJESD-30 Code: R-XDFM-F8Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,