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Infineon Technologies BCR 162 E6327,BCR 162 E6327 pictures,BCR 162 E6327 supplier,BCR 162 E6327 stock
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Datasheets:BCR162Product Photos:SOT-23-3Standard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):4.7kResistor - Emitter Base (R2) (Ohms):4.7kDC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5mA, 5VVce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mACurrent - Collector Cutoff (Max):-Frequency - Transition:200MHzPower - Max:200mWMounting Type:Surface MountPackage / Case:TO-236-3, SC-59, SOT-23-3Supplier Device Package:PG-SOT23-3Other Names:BCR162E6327HTSA1BCR162E6327XTSP000010785
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Datasheets:BCR162Product Photos:SOT-23-3Standard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:PNP - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):4.7kResistor - Emitter Base (R2) (Ohms):4.7kDC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5mA, 5VVce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mACurrent - Collector Cutoff (Max):-Frequency - Transition:200MHzPower - Max:200mWMounting Type:Surface MountPackage / Case:TO-236-3, SC-59, SOT-23-3Supplier Device Package:PG-SOT23-3Other Names:BCR162E6327HTSA1BCR162E6327XTSP000010785
Shunlongwei Inspected every BCR 162 E6327 before Ship, All BCR 162 E6327 with 6 months warranty.
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