#Rohm Semiconductor, #BCW60CT116, #IGBT_Module, #IGBT, BCW60CT116 Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon; BCW60CT116
Manufacturer Part Number: BCW60CT116Part Life Cycle Code: ObsoleteIhs Manufacturer: Rohm CO LTDPackage Description: SMALL OUTLINE, R-PDSO-G3ECCN Code: EAR99HTS Code: 8541.21.00.75Manufacturer: Rohm SemiconductorRisk Rank: 5.56Additional Feature: LOW NOISECollector Current-Max (IC): 0.2 ACollector-Base Capacitance-Max: 4.5 pFCollector-Emitter Voltage-Max: 32 VConfiguration: SINGLEDC Current Gain-Min (hFE): 260JESD-30 Code: R-PDSO-G3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTransistor Application: AMPLIFIERTransistor Element Material: SILICONTransition Frequency-Nom (fT): 125 MHzVCEsat-Max: 0.3 V Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon