#STMicroelectronics, #BD435, #IGBT_Module, #IGBT, BD435 4A, 32V, NPN, Si, POWER TRANSISTOR, TO-126, PLASTIC PACKAGE-3; BD435
Manufacturer Part Number: BD435Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: STMICROELECTRONICSPart Package Code: SIPPackage Description: PLASTIC PACKAGE-3Pin Count: 3ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 7.3Case Connection: ISOLATEDCollector Current-Max (IC): 4 ACollector-Emitter Voltage-Max: 32 VConfiguration: SINGLEDC Current Gain-Min (hFE): 50JEDEC-95 Code: TO-126JESD-30 Code: R-PSFM-T3JESD-609 Code: e3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation Ambient-Max: 36 WPower Dissipation-Max (Abs): 36 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime 4A, 32V, NPN, Si, POWER TRANSISTOR, TO-126, PLASTIC PACKAGE-3