#NXP Semiconductors, #BLS7G3135LS_200U, #IGBT_Module, #IGBT, BLS7G3135LS-200U RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconduct
Manufacturer Part Number: BLS7G3135LS-200URohs Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: AMPLEON NETHERLANDS B VPackage Description: FLATPACK, R-CDFP-F2ECCN Code: EAR99Manufacturer: AmpleonRisk Rank: 5.73Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 65 VFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: S BANDJESD-30 Code: R-CDFP-F2Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: FLATPACKPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELReference Standard: IEC-60134Surface Mount: YESTerminal Form: FLATTerminal Position: DUALTime RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2