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BSM100GB120DLCK
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: YES
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.1 V
Continuous Collector Current at 25 C: 205 A
Gate-Emitter Leakage Current: 400 nA
Maximum Operating Temperature: + 125 C
Package / Case: 34MM
Packaging: Tray
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Pd - Power Dissipation: 835 W
Factory Pack Quantity: 500



Shunlongwei Inspected every BSM100GB120DLCK before Ship, All BSM100GB120DLCK with 6 months warranty.
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