#EUPEC, #BSM100GB120DLCK, #IGBT_Module, #IGBT, BSM100GB120DLCK IGBT Modules 1200V 100A DUAL ;
BSM100GB120DLCK Manufacturer: Infineon Product Category: IGBT Modules RoHS: YES Brand: Infineon Technologies Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.1 V Continuous Collector Current at 25 C: 205 A Gate-Emitter Leakage Current: 400 nA Maximum Operating Temperature: + 125 C Package / Case: 34MM Packaging: Tray Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw Pd - Power Dissipation: 835 W Factory Pack Quantity: 500 IGBT Modules 1200V 100A DUAL