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BSM100GB170DN2
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: No
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1700 V
Collector-Emitter Saturation Voltage: 3.4 V
Continuous Collector Current at 25 C: 145 A
Gate-Emitter Leakage Current: 320 nA
Pd - Power Dissipation: 1 kW
Package / Case: Half Bridge2
Maximum Operating Temperature: + 150 C
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10



Shunlongwei Inspected every BSM100GB170DN2 before Ship, All BSM100GB170DN2 with 6 months warranty.
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