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Infineon BSM100GD120DN2 New IGBT Module

#Infineon, #BSM100GD120DN2, #IGBT_Module, #IGBT, IGBT Modules 1200V 100A FL BRIDGE

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$
· Date Code: 2022+
. Available Qty: 255
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BSM100GD120DN2 Specification

Sell BSM100GD120DN2, #Infineon #BSM100GD120DN2 New Stock, IGBT Modules 1200V 100A FL BRIDGE, #IGBT_Module, #IGBT, #BSM100GD120DN2
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BSM100GD120DN2

Manufacturer: Infineon

Product Category: IGBT Modules

· Solderable Power module

· 3-phase full-bridge

· Including fast free-wheel diodes

· Package with insulated metal base plate Type BSM 100 GD 120 DN2

Maximum Ratings Parameter

Collector-emitter voltage Collector-gate voltage RGE = 20 k

Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C

Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C

Power dissipation per IGBT TC = 25 °C

Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min.

BSM100GD120DN2 Specifications:

  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • Collector Emitter Voltage Vces: 3 V
  • Current Ic Continuous a Max: 100 A
  • Current Temperature: 80°C
  • DC Collector Current: 150 A
  • Full Power Rating Temperature: 25°C
  • Module Configuration: Six
  • Mounting Type: Solder
  • Number of Pins: 39
  • Number of Transistors: 6
  • Operating Temperature Range: -40°C to +125°C
  • Package / Case: Econopack 3
  • Power Dissipation Max: 680 W
  • Power Dissipation Pd: 680 W
  • Power Dissipation: 680 W
  • Pulsed Current Icm: 200 A
  • Transistor Case Style: Econopack 3
  • Transistor Type:
  • Voltage Vce Sat Typ: 2.5 V
  • Voltage Vces: 1.2kV
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