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BSM200GA120DN2 
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: YES
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 300 A
Gate-Emitter Leakage Current: 200 nA
Pd - Power Dissipation: 1550 W
Package / Case: 62 mm
Maximum Operating Temperature: + 150 C
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10



Shunlongwei Inspected every BSM200GA120DN2 before Ship, All BSM200GA120DN2 with 6 months warranty.
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