#EUPEC, #BSM20GD60DN2, #IGBT_Module, #IGBT, BSM20GD60DN2 Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES,; BSM20GD60DN2
Manufacturer Part Number: BSM20GD60DN2Rohs Code: NoPart Life Cycle Code: TransferredIhs Manufacturer: EUPEC GMBH & CO KGManufacturer: Eupec Gmbh & Co KgRisk Rank: 5.74Collector Current-Max (IC): 20 ACollector-Emitter Voltage-Max: 600 VGate-Emitter Voltage-Max: 20 VJESD-609 Code: e0Number of Elements: 1Operating Temperature-Max: 150 °CPower Dissipation-Max (Abs): 90 WSubcategory: Insulated Gate BIP TransistorsTerminal Finish: Tin/Lead (Sn/Pb)VCEsat-Max: 2.7 V Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES,