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Infineon BSM25GB120DN2 New IGBT Module

#Infineon, #BSM25GB120DN2, #IGBT_Module, #IGBT, BSM25GB120DN2 ;

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 34
· Date Code: 2018+
. Available Qty: 511
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= Total: US$ 69
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BSM25GB120DN2 Specification

Sell BSM25GB120DN2, #Infineon #BSM25GB120DN2 New Stock, BSM25GB120DN2 ;, #IGBT_Module, #IGBT, #BSM25GB120DN2
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BSM25GB120DN2

Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: No

Brand: Infineon Technologies

Product: IGBT Silicon Modules

Configuration: Half Bridge

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 38 A

Gate-Emitter Leakage Current: 180 nA

Maximum Operating Temperature: + 150 C

Package / Case: Half Bridge1

Maximum Gate Emitter Voltage: 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Pd - Power Dissipation: 200 W

Factory Pack Quantity: 500

 

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