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EUPEC BSM25GB120DN2,BSM25GB120DN2 pictures,BSM25GB120DN2 supplier,BSM25GB120DN2 stock
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Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: No
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 38 A
Gate-Emitter Leakage Current: 180 nA
Maximum Operating Temperature: + 150 C
Package / Case: Half Bridge1
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Pd - Power Dissipation: 200 W
Factory Pack Quantity: 500

Shunlongwei Inspected every BSM25GB120DN2 before Ship, All BSM25GB120DN2 with 6 months warranty.
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