#EUPEC, #BSM35GB120DLC, #IGBT_Module, #IGBT, BSM35GB120DLC Insulated Gate Bipolar Transistor 75A I(C) 1200V V(BR)CES N-Channel; BSM35GB120DLC
Manufacturer Part Number: BSM35GB120DLC Part Life Cycle Code: Obsolete Ihs Manufacturer: EUPEC GMBH & CO KG Manufacturer: Eupec Gmbh & Co Kg Risk Rank: 5.64 Case Connection: ISOLATED Collector Current-Max (IC): 75 A Collector-Emitter Voltage-Max: 1200 V Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE Gate-Emitter Voltage-Max: 20 V JESD-30 Code: R-XUFM-X7 Number of Elements: 2 Number of Terminals: 7 Operating Temperature-Max: 125 °C Package Body Material: UNSPECIFIED Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Polarity/Channel Type: N-CHANNEL Power Dissipation-Max (Abs): 310 W Qualification Status: Not Qualified Subcategory: Insulated Gate BIP Transistors Surface Mount: NO Terminal Form: UNSPECIFIED Terminal Position: UPPER Transistor Element Material: SILICON Turn-off Time-Nom (toff): 370 ns Turn-on Time-Nom (ton): 110 ns VCEsat-Max: 2.6 V Insulated Gate Bipolar Transistor 75A I(C) 1200V V(BR)CES N-Channel