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BSM35GD120DN2

Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: No
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Continuous Collector Current at 25 C: 550 A
Pd - Power Dissipation: 2700 W
Package / Case: 62 mm
Maximum Operating Temperature: + 150 C
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10



Shunlongwei Inspected every BSM35GD120DN2 before Ship, All BSM35GD120DN2 with 6 months warranty.
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