#Infineon, #BSM50GB170DN2, #IGBT_Module, #IGBT, BSM50GB170DN2 50A/1700V/IGBT/2U;IGBT Modules 1700V 50A 500W HALF-BRIDGE ; BSM50GB170DN2
BSM50GB170DN2 Manufacturer: Infineon Product Category: IGBT Modules RoHS: YES Brand: Infineon Technologies Product: IGBT Silicon Modules Configuration: Half Bridge Collector- Emitter Voltage VCEO Max: 1700 V Collector-Emitter Saturation Voltage: 3.4 V Continuous Collector Current at 25 C: 72 A Gate-Emitter Leakage Current: 320 nA Pd - Power Dissipation: 500 W Package / Case: Half Bridge1 Maximum Operating Temperature: + 150 C Packaging: Tray Maximum Gate Emitter Voltage: 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw Factory Pack Quantity: 10 50A/1700V/IGBT/2U;IGBT Modules 1700V 50A 500W HALF-BRIDGE