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BSM50GD120DN2E
Manufacturer: Infineon
Product Category: IGBT Modules
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 50 A
Gate-Emitter Leakage Current: 200 nA
Maximum Operating Temperature: + 150 C
Package / Case: EconoPACK 2
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Screw
Pd - Power Dissipation: 350 W
Factory Pack Quantity: 10
VendorNumber: 6411



Shunlongwei Inspected every BSM50GD120DN2E before Ship, All BSM50GD120DN2E with 6 months warranty.
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