Eupec BSM50GD120DN2E IGBT Module

BSM50GD120DN2E Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Hex Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.5 V Continuous Collector Current at 25 C: 50 A Gate-Emitter Leakage Current: 200 nA Maximum Operating Temperature: + 150 C Package / Case: EconoPACK 2 Brand: Infineon Technologies Maximum Gate Emitter Voltage: 20 V Mounting Style: Screw Pd - Power Dissipation: 350 W Factory Pack Quantity: 10 VendorNumber: 6411   IGBT Modules N-CH 1.2KV 50A