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The BSM50GD60DN2 is an IGBT Low Power Module with fast free wheel diodes and insulated metal base plate.
  • 3-phase Full bridge
  • 100ns Rise time
  • 100ns Fall time
  • ±20V Gate-emitter voltage
  • Collector Emitter Voltage V(br)ceo: 600V
  • Collector Emitter Voltage Vces: 3V
  • DC Collector Current: 72A
  • No. of Pins: 17
  • Operating Temperature Max: 125°C
  • Operating Temperature Min: -40°C
  • Power Dissipation Pd: 350W
  • SVHC: To Be Advised
  • Transistor Case Style: EconoPACK
  • Transistor Polarity: N Channel


Shunlongwei Inspected every BSM50GD60DN2 before Ship, All BSM50GD60DN2 with 6 months warranty.
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