#Powerex Inc, #C358B, #IGBT_Module, #IGBT, C358B Silicon Controlled Rectifier, 235.5A I(T)RMS, 240000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, T62, 3 PIN; C358
Manufacturer Part Number: C358BPart Life Cycle Code: ActiveIhs Manufacturer: Powerex INCPackage Description: DISK BUTTON, O-CEDB-N2Pin Count: 3ECCN Code: EAR99HTS Code: 8541.30.00.80Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.68Additional Feature: FASTCircuit Commutated Turn-off Time-Nom: 40 µsConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 200 V/usDC Gate Trigger Current-Max: 300 mADC Gate Trigger Voltage-Max: 5 VJESD-30 Code: O-CEDB-N2Leakage Current-Max: 25 mANon-Repetitive Pk On-state Cur: 3500 ANumber of Elements: 1Number of Terminals: 2On-state Current-Max: 240000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -45 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONQualification Status: Not QualifiedRMS On-state Current-Max: 235.5 ARepetitive Peak Off-state Voltage: 200 VRepetitive Peak Reverse Voltage: 200 VSubcategory: Silicon Controlled RectifiersSurface Mount: YESTerminal Form: NO LEADTerminal Position: ENDTrigger Device Type: SCR Silicon Controlled Rectifier, 235.5A I(T)RMS, 240000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, T62, 3 PIN