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Mitsubishi CM1000DXL-24S New IGBT Module

#Mitsubishi, #CM1000DXL_24S, #IGBT_Module, #IGBT, Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$
· Date Code: 2022+
. Available Qty: 779
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CM1000DXL-24S Specification

Sell CM1000DXL-24S, #Mitsubishi #CM1000DXL-24S New Stock, Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, #IGBT_Module, #IGBT, #CM1000DXL_24S
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Mitsubishi igbt #CM1000DXL-24S

High power switching use insulated type

Collector current IC..............................................900A

Collector-emittr voltage VCES.............................1200V

Maximum junction tempeerature Tjmax.............175°C

. Flat base Type

. Copper base plate (non-plating)

. Tin plating pin terminals

. RoHS Directive compliant

. DC current rating is limited by power terminals.

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage G-E short-circuited Vces:1200V

Gate-Emitter voltage G-E short-circuited VGES:±20V

Collector current DC,Tc=124°C(Note. 2,4 ) Ic : 25A

Collector current Pulse,Repetitive(Note.3) ICRM  : 2000A

Total power dissipation TC=25 °C(Note. 2,4 ) Ptot :7500W

Isolation between terminal and copper base*2 Viso AC :1 minVisol :2500V

Maximum junction temperature Tjmax 175°C

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5*1 N·m

Weight Typical value 690g

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