Sell CM1200HA-66H MITSUBISHI IGBT Module

#MITSUBISHI, #CM1200HA_66H, #IGBT_Module, #IGBT, CM1200HA-66H Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel

· Categories: IGBT Module

· Manufacturer: MITSUBISHI

· Price: US$

· Date Code: 2022+

. Available Qty: 474

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CM1200HA-66H Specification

Sell CM1200HA-66H, #MITSUBISHI #CM1200HA-66H Stock, CM1200HA-66H Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel, #IGBT_Module, #IGBT, #CM1200HA_66H

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Maximum ratings and characteristics .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:3300V Gate-Emitter voltage VGES:±20V Collector current Ic:1200A Collector current Icp:2400A Collector power dissipation Pc:10420W Collector-Emitter voltage VCES:6000V Operating junction temperature Tj:-40~+150°C Storage temperature Tstg :-40 to +125°C Mounting torque Main terminals screw M86.67~8.24 N.m Mounting torque Mounting screw M6 2.84~3.43 N.m Mounting torque Auxiliary terminals screw M4 0.88~1.08 N.m Weight Typical value 22KG

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MITSUBISHI CM1200HA-66H IGBT Module

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CM1200HA-66H Specification

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