#MITSUBISHI, #CM200TU_12H, #IGBT_Module, #IGBT, CM200TU-12H Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel; CM200TU-12H
Manufacturer Part Number: CM200TU-12HPart Life Cycle Code: ObsoleteIhs Manufacturer: Powerex INCPackage Description: FLANGE MOUNT, R-XUFM-X17Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.16Case Connection: ISOLATEDCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X17Number of Elements: 6Number of Terminals: 17Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 650 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 600 nsTurn-on Time-Nom (ton): 150 nsVCEsat-Max: 3 V Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel