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Mitsubishi CM300DY-28H IGBT Module

#Mitsubishi, #CM300DY_28H, #IGBT_Module, #IGBT, CM300DY-28H Insulated Gate Bipolar Transistor 300A I(C) 1400V V(BR)CES N-Channel; CM300DY-28H

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$
· Date Code: 2018+
. Available Qty: 250
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CM300DY-28H Specification

Sell CM300DY-28H, #Mitsubishi #CM300DY-28H Stock, CM300DY-28H Insulated Gate Bipolar Transistor 300A I(C) 1400V V(BR)CES N-Channel; CM300DY-28H, #IGBT_Module, #IGBT, #CM300DY_28H
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Manufacturer Part Number: CM300DY-28H

Package Description: FLANGE MOUNT, R-XUFM-X7

Manufacturer: Mitsubishi Power Semiconductors

Case Connection: ISOLATED

Collector Current-Max (IC): 300 A

Collector-Emitter Voltage-Max: 1400 V

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X7

Number of Elements: 2

Number of Terminals: 7

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Peak Reflow Temperature (Cel): NOT SPECIFIED

Polarity/Channel Type: N-CHANNEL

Power Dissipation-Max (Abs): 2100 W

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Insulated Gate Bipolar Transistor 300A I(C) 1400V V(BR)CES N-Channel

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