#MITSUBISHI, #CM350DU_5F, #IGBT_Module, #IGBT, CM350DU-5F Insulated Gate Bipolar Transistor, 350A I(C), 250V V(BR)CES, N-Channel,; CM350DU-5F
Manufacturer Part Number: CM350DU-5FPbfree Code: NoPart Life Cycle Code: Not RecommendedIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-XUFM-X7ECCN Code: EAR99Manufacturer: Mitsubishi ElectricRisk Rank: 5.19Additional Feature: SUPER FAST RECOVERYCase Connection: ISOLATEDCollector Current-Max (IC): 350 ACollector-Emitter Voltage-Max: 250 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 960 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 350A I(C), 250V V(BR)CES, N-Channel,