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DYNEX DIM1200DDM17-E IGBT Module

#DYNEX, #DIM1200DDM17_E, #IGBT_Module, #IGBT, DIM1200DDM17-E Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, D, 10 PIN; DIM1200DDM1

· Categories: IGBT Module
· Manufacturer: DYNEX
· Price: US$
· Date Code: 11+
. Available Qty: 49
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DIM1200DDM17-E Specification

Sell DIM1200DDM17-E, #DYNEX #DIM1200DDM17-E Stock, DIM1200DDM17-E Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, D, 10 PIN; DIM1200DDM17-E, #IGBT_Module, #IGBT, #DIM1200DDM17_E
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/dim1200ddm17-e.html

Manufacturer Part Number: DIM1200DDM17-E000Pbfree Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: DYNEX SEMICONDUCTOR LTDPackage Description: FLANGE MOUNT, R-PUFM-X10Pin Count: 10Manufacturer: Dynex SemiconductorRisk Rank: 5.73Additional Feature: LOW CONDUCTION LOSS, HIGH RELIABILITYCase Connection: ISOLATEDCollector Current-Max (IC): 1200 ACollector-Emitter Voltage-Max: 1700 VConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-PUFM-X10Number of Elements: 2Number of Terminals: 10Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, D, 10 PIN

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