#DYNEX, #DIM250WHS06_S, #IGBT_Module, #IGBT, DIM250WHS06-S Insulated Gate Bipolar Transistor, 250A I(C), 600V V(BR)CES, N-Channel, W, 7 PIN; DIM250WHS06-S
Manufacturer Part Number: DIM250WHS06-S000Pbfree Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: DYNEX SEMICONDUCTOR LTDPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7Manufacturer: Dynex SemiconductorRisk Rank: 5.73Case Connection: ISOLATEDCollector Current-Max (IC): 250 ACollector-Emitter Voltage-Max: 600 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 250A I(C), 600V V(BR)CES, N-Channel, W, 7 PIN