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DYNEX DIM600DDM12-E New IGBT Module

#DYNEX, #DIM600DDM12_E, #IGBT_Module, #IGBT, DIM600DDM12-E Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, D, 12 PIN; DIM600DDM12-E

· Categories: IGBT Module
· Manufacturer: DYNEX
· Price: US$
· Date Code: 11+
. Available Qty: 187
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DIM600DDM12-E Specification

Sell DIM600DDM12-E, #DYNEX #DIM600DDM12-E New Stock, DIM600DDM12-E Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, D, 12 PIN; DIM600DDM12-E, #IGBT_Module, #IGBT, #DIM600DDM12_E
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/dim600ddm12-e.html

Manufacturer Part Number: DIM600DDM12-E000Pbfree Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: DYNEX SEMICONDUCTOR LTDPackage Description: FLANGE MOUNT, R-PUFM-X12Pin Count: 12Manufacturer: Dynex SemiconductorRisk Rank: 5.73Additional Feature: HIGH RELIABILITYCase Connection: ISOLATEDCollector Current-Max (IC): 600 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-PUFM-X12Number of Elements: 2Number of Terminals: 12Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, D, 12 PIN

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