#DYNEX, #DIM600DDM12_E, #IGBT_Module, #IGBT, DIM600DDM12-E Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, D, 12 PIN; DIM600DDM12-E
Manufacturer Part Number: DIM600DDM12-E000Pbfree Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: DYNEX SEMICONDUCTOR LTDPackage Description: FLANGE MOUNT, R-PUFM-X12Pin Count: 12Manufacturer: Dynex SemiconductorRisk Rank: 5.73Additional Feature: HIGH RELIABILITYCase Connection: ISOLATEDCollector Current-Max (IC): 600 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-PUFM-X12Number of Elements: 2Number of Terminals: 12Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, D, 12 PIN