#Diodes Inc, #DMG3415UFY4_7, #IGBT_Module, #IGBT, DMG3415UFY4-7 Small Signal Field-Effect Transistor, 2.5A I(D), 16V, 1-Element, P-Channel, Silicon, Metal-oxide Semicondu
Manufacturer Part Number: DMG3415UFY4-7Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: DIODES INCPart Package Code: DFNPackage Description: GREEN, PLASTIC, CASE DFN2015H4-3, 3 PINPin Count: 3Manufacturer Package Code: CASE DFN2015H4-3ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 7.87Case Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 16 VDrain Current-Max (Abs) (ID): 2.5 ADrain Current-Max (ID): 2.5 ADrain-source On Resistance-Max: 0.039 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-N3JESD-609 Code: e4Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 0.49 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)Terminal Form: NO LEADTerminal Position: DUALTime Small Signal Field-Effect Transistor, 2.5A I(D), 16V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, CASE DFN2015H4-3, 3 PIN