#Diodes Inc, #DMN1019UFDE_7, #IGBT_Module, #IGBT, DMN1019UFDE-7 Small Signal Field-Effect Transistor, 1.1A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semicondu
Manufacturer Part Number: DMN1019UFDE-7Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-N3ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 1.6Additional Feature: HIGH RELIABILITYCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 12 VDrain Current-Max (Abs) (ID): 11 ADrain Current-Max (ID): 1.1 ADrain-source On Resistance-Max: 0.01 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-N3JESD-609 Code: e4Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2.17 WReference Standard: AEC-Q101Subcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)Terminal Form: NO LEADTerminal Position: DUALTime Small Signal Field-Effect Transistor, 1.1A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, U-DFN2020-6, E-TYPE PACKAGE-6